High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 217-223

  Fukawa, Makoto ^a   Suzuki, Susumu ^a   Guo, Lihui ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; FILM GROWTH; HIGH PRESSURE EFFECTS; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SOLAR CELLS;

HIGH PRESSURE DEPLETION; MICROCRYSTALLINE SILICON;

CRYSTALLINE MATERIALS;

EID: 0035254559     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00176-8     Document Type: Article

References (7)

1. Meier J.et al. Proc. Mater. Res. Soc. Symp. 420:1996;3.
2. Yamamoto K.et al. Proc. Mater. Res. Soc. Symp. 507:1998;131.
3. K. Saito, M. Sano, K. Matsuda, T. Kondo, T. Nishimoto, K. Ogawa, I. Kajita, Proceedings of WCPEC2, Vienna, 1998, p. 351.
4. Guo L., Kondo M., Fukawa M., Saitoh K., Matsuda A. Jpn. J. Appl. Phys. 37:1998;L1116.
5. Matsuda A. J. Non-Cryst Solids. 59&60:1983;767.
6. Matsuda A., Kumagai K., Tanaka K. Jpn. J. Appl. Phys. 22:1983;L34.
7. Finger F., Hapke P., Luysberg M., Carius R., Wagner H., Scheib M. Appl. Phys. Lett. 65:1994;2588.