On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon

Journal of Applied Physics

Volumn 96, Issue 7, 2004, Pages 3818-3826

  Mahan, A H ^a   Biswas, R ^b   Gedvilas, L M ^a   Williamson, D L ^c   Pan, B C ^b,d  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Iowa State University of Science and Technology   (United States)

^c Department of Geology and Geological Engineering   (United States)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTION; HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); HYDROGENATED AMORPHOUS SILICON; SUBSTRATE TEMPERATURE;

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; HYDROGENATION; LIGHT ABSORPTION; MOLECULAR DYNAMICS; ORDER DISORDER TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SILICON;

EID: 7244221503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1772876     Document Type: Article

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