Increasing medium-range order in amorphous silicon with low-energy ion bombardment

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3665-3667

  Gerbi, J E ^a,b   Voyles, P M ^a,c   Treacy, M M J ^a,d   Gibson, J M ^a,e   Abelson, J R ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

^d NEC LABORATORIES AMERICA   (United States)

^e ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; ELLIPSOMETRY; EPITAXIAL GROWTH; ION BOMBARDMENT; MAGNETRON SPUTTERING; RAMAN SCATTERING; REACTION KINETICS; SPUTTER DEPOSITION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FLUCTUATION ELECTRON MICROSCOPY (FEM);

AMORPHOUS SILICON;

EID: 0038306948     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1578164     Document Type: Article

References (11)

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