High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 940-944

  Matsuyama, T ^a   Terada, N ^a   Baba, T ^a   Sawada, T ^a   Tsuge, S ^a   Wakisaka, K ^a   Tsuda, S ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; ELECTRON TRANSPORT PROPERTIES; ENERGY CONVERSION; ENERGY EFFICIENCY; FILM PREPARATION; NUCLEATION; POLYCRYSTALLINE MATERIALS; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS;

ELECTRON MOBILITY; POLYCRYSTALLINE SILICON THIN FILM; SOLID PHASE CRYSTALLIZATION; TOTAL AREA CONVERSION EFFICIENCY;

SILICON;

EID: 0030563303     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00091-9     Document Type: Article

References (8)

1. B.J. Baliga, J. Cryst. Growth 41 (1977) 199.
2. R.R. Haberecht and E.L. Kern, in: Semiconductor Silicon (Electrochemical Society, 1969).
3. A. Gat, L. Gerzlieyg, J.F. Gibbons, T.J. Magee, J. Peng and J.D. Hong, Appl. Phys. Lett. 33 (1978) 775.
4. F.S. Becker, H. Oppolzer, I. Weitzel, H. Eichermueller and H. Schaber, J. Appl. Phys. 56 (1984) 1233.
5. T. Matsuyama, M. Taguchi, M. Tanaka, T. Matsuoka, S. Tsuda, S. Nakano and Y. Kuwano, Jpn. J. Appl. Phys. 29 (1990) 2327.
6. T. Matsuyama, T. Baba, M. Tanaka, S. Tsuda, H. Nishiwaki, S. Nakano, H. Hanafusa, and Y. Kuwano, Mat. Res. Soc. Symp. Proc. 283 (1993) 727.
7. T. Matsuyama, M. Tanaka, S. Tsuda, S. Nakano and Y. Kuwano, Jpn. J. Appl. Phys. 32 (1993) 3720.
8. A. Matsuda, J. Non-Cryst. Solids 59/60 (1983) 767.