In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Sharma, K ^a   Verheijen, M A ^a   Van De Sanden, M C M ^a,b   Creatore, M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION PROCESS; INCUBATION TIME; KINETICS STUDIES; LARGE-GRAIN; MEDIUM-RANGE ORDER; MICROSTRUCTURE PARAMETERS; NANO-SIZED; SILICON MICROSTRUCTURES;

CRYSTALLIZATION KINETICS; MICROSTRUCTURE;

AMORPHOUS SILICON;

EID: 84857422406     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3681185     Document Type: Article

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