Characterization and analysis of the hysteresis in a ZnO nanoparticle thin-film transistor

IEEE Transactions on Nanotechnology

Volumn 12, Issue 3, 2013, Pages 296-303

  Vidor, F F ^a   Wirth, G ^a   Assion, F ^b   Wolff, K ^b   Hilleringmann, U ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Hysteresis; nanotechnology; semiconductor insulator interfaces; thin film transistors (TFTs); ZnO

Indexed keywords

EXPERIMENTAL INVESTIGATIONS; FLEXIBLE AND TRANSPARENT ELECTRONICS; GATE DIELECTRIC LAYERS; SEMICONDUCTOR-INSULATOR INTERFACE; TEMPERATURE VARIATION; THIN-FILM TRANSISTOR (TFTS); TRANSFER CHARACTERISTICS; ZNO;

FLEXIBLE ELECTRONICS; GATE DIELECTRICS; METAL NANOPARTICLES; NANOTECHNOLOGY; POLYMERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC OXIDE;

HYSTERESIS;

EID: 84877842894     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2236891     Document Type: Article

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