Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 110-114

  Wolff, K ^a   Hilleringmann, U ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

FET integrated circuits; Low cost electronics; Nanoparticles; Thin film transistors; ZnO

Indexed keywords

COLLOIDAL DISPERSION; FET INTEGRATED CIRCUITS; INVERTER-BASED; LOW-COST ELECTRONICS; PLASTIC SUBSTRATES; POLY(4-VINYLPHENOL); POLYMER GATE DIELECTRICS; PROCESS TEMPERATURE; SOLUTION-PROCESSED; STATIC-POWER DISSIPATION; SUPPLY VOLTAGES; TRANSFER CHARACTERISTICS; ZINC OXIDE NANOPARTICLES; ZNO; ZNO ACTIVE LAYERS; ZNO NANOPARTICLES;

GATE DIELECTRICS; GATES (TRANSISTOR); NANOPARTICLES; THIN FILM TRANSISTORS; ZINC OXIDE;

THIN FILM CIRCUITS;

EID: 79957934570     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.046     Document Type: Article

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