Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 226-229

  Wolff, Karsten ^a   Hilleringmann, Ulrich ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS AND MODELING; ANALYTICAL MODEL; CIRCUIT DESIGNS; COMPLEX NATURE; DEVICE PHYSICS; EXPERIMENTAL DATA; MOS-FET; SATURATION REGION; SEMI-EMPIRICAL PARAMETERS; SHORT-CHANNEL EFFECT; TRANSISTOR CHARACTERISTICS; ZNO;

DESIGN; MATHEMATICAL MODELS; NANOPARTICLES; SOLID STATE DEVICES; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78649980450     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618383     Document Type: Conference Paper

References (10)

1. S. Lee, Y. Jeong, S. Jeong, J. Lee, M. Jeon, and J. Moon, "Solutionprocessed ZnO nanoparticle-based semiconductor oxide thin-film transistors, " Superlattices and Microstructures, vol. 44, no. 6, pp. 761-769, 2008.
2. K. S. Volkman, A. B. Mattis, Molesa, S.E., Lee, J.B., Fuente Vornbrock, A. de la, T. Bakhishev, and V. Subramanian, "A novel transparent airstable printable n-type semiconductor technology using ZnO nanoparticles, " 2005.
3. H. Faber, M. Burkhardt, A. Jedaa, D. Kälblein, H. Klauk, and M. Halik, "Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles, " Advanced Materials, vol. 21, no. 30, pp. 3099-3104, 2009.
4. K. Okamura, N. Mechau, D. Nikolova, and H. Hahn, "Influence of interface roughness on the performance of nanoparticulate zinc oxide field-effect transistors, " Appl. Phys. Lett., vol. 93, no. 8, pp. 083 105-1 - 3, 2008.
5. S.M. Sze, Physics of semiconductor devices. New York, USA: John Wiley & Sons, Inc., 1981.
6. R. J. Tucker, C. Wang, and S. P. Carney, "Silicon field-effect transistor based on quantum tunneling, " Appl. Phys. Lett., vol. 65, no. 5, pp. 618- 620, 1994.
7. Degussa AG (Advanced Nanomaterials), "Datasheet "AdNano Zinc Oxide", " www.advancednanomaterials.com, 2006.
8. J. S. Chung, P. J. Leonard, I. Nettleship, K. J. Lee, Y. Soong, V. D. Martello, and K. M. Chyu, "Characterization of ZnO nanoparticle suspension in water: Effectiveness of ultrasonic dispersion, " Powder Technology, vol. 194, no. 1-2, pp. 75-80, 2009.
9. K. Ip, T. G. Thaler, H. Yang, S. Youn Han, Y. Li, P. D. Norton, J. S. Pearton, S. Jang, and F. Ren, "Contacts to ZnO: Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N - ZnO and Related Materials, " Journal of Crystal Growth, vol. 287, no. 1, pp. 149-156, 2006.
10. Y. K. Fu, "Mobility degradation due to the gate field in the inversion layer of MOSFET's, " Electron Device Letters, IEEE, vol. 3, no. 10, pp. 292-293, 1982.