Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices

Physica A: Statistical Mechanics and its Applications

Volumn 362, Issue 2, 2006, Pages 277-288

  Da Silva, Roberto ^a   Wirth, Gilson I ^b   Brederlow, Ralf ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSIDADE ESTADUAL DO RIO GRANDE DO SUL   (Brazil)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

1 f noise; CMOS devices; Numerical modeling

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ERROR ANALYSIS; FREQUENCIES; MATHEMATICAL MODELS; NUMERICAL METHODS; ROBUSTNESS (CONTROL SYSTEMS);

1/F NOISE; CMOS DEVICES; FREQUENCY BANDWIDTH; NUMERICAL MODELING;

SEMICONDUCTOR DEVICES;

EID: 32544435130     PISSN: 03784371     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physa.2005.11.014     Document Type: Article

References (8)

1. A. Godoy, F. Gámiz, A. Palma, J.A. Jiménez-Tejada, J. Banqueri, and J.A. López-Villanueva Influence of mobility fluctuations on random telegraph signal amplitude in n -channel metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 82 1997 4621 4628
2. T. Boutchacha, and G. Ghibaudo Low frequency noise characterization of 0.18 mm Si CMOS transistors Phys. Stat. Sol. (a) 167 1998 261 270
3. M.J. Kirton, and M.J. Uren Noise in solid-state microstructures: a new perspective on individual defects, interface states and low-frequency (1 / f ) noise Adv. Phys. 38 1989 367 468
4. H.H. Mueller, and M. Schulz Random telegraph signal: an atomic probe of the local current in field-effect transistors J. Appl. Phys. 83 1998 1734 1741
5. H.M. Bu, Y. Shi, Y.D. Zheng, S.H. Gu, H. Majima, H. Ishikuro, and T. Hiramoto Impact of the device scaling on the low-frequency noise in n -MOSFETs Appl. Phys. A 71 2000 133 136
6. G. I. Wirth, J. Koh, R. da Silva, R. Thewes, R. Brederlow, Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs, IEEE Trans. Electron. Devices 52 (7) (2005) 1576-1588.
7. P. Dutta, and P.M. Horn Low-frequency fluctuations in solids: 1 / f noise Rev. Mod. Phys. 53 1981 497 516
8. G.I. Wirth, R. da Silva, R. Brederlow, Low-frequency fluctuations in deep-submicron MOSFETs: microscopic statistical modeling, J. Appl. Phys., 2005, to appear.