Characterization of oxide traps leading to RTN in high-K and metal gate MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Lee, Sanghoon ^a   Cho, Heung Jae ^a   Son, Younghwan ^a   Lee, Dong Seup ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BAND STRUCTURE; ENERGY LEVEL; GATE CURRENT; HIGH-K DIELECTRIC; INTERFACIAL LAYER; METAL GATE MOSFETS; OXIDE TRAPS; RANDOM TELEGRAPH NOISE;

ACTIVATION ENERGY; BAND STRUCTURE; DRAIN CURRENT; ELECTRON DEVICES; MOSFET DEVICES; SMELTING; TELEGRAPH;

LEAD OXIDE;

EID: 77952340441     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424227     Document Type: Conference Paper

References (4)

1. C. M. Chang, Steve S. Chung, Y. S. Hsieh, L. W. Cheng, C. T. Tsai, G. H. Ma, S. C. Chien, and S. W. Sun, "The Observation of Trapping and Detrapping Effects in High-k Gate Dielectric MOSFETs by a New Gate Current Random Telegraph Noise (IG-RTN) Approach", International Electron Device Meeting, pp.787-790, Dec., 2007.
2. Kobayashi S, Saitoh M, Uchida K, "Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs", VLSI Technology Symposium, pp. 78-79, June, 2008.
3. Southwick R.G., Knowlton W. B., "Stacked dual-oxide MOS energy band diagram visual representation program", IEEE Transactions on Device and Materials Reliability, pp.136-145, Vol 6, Issue 2, June, 2006.
4. S. Yang, H. Lee and H. Shin, "Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four- Level Random Telegraph Signal Noise," Japanese Journal of Applied Physics, vol.47, no.4, pp. 2606-2609, 2008.