Trap states and space charge limited current in dispersion processed zinc oxide thin films

Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

  Bubel, S ^a,b   Mechau, N ^a   Hahn, H ^a,c   Schmechel, R ^b  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ATMOSPHERE; DEEP TRAPS; DEFECT STATE; ELECTRIC TRANSPORT PROPERTIES; FIELD-EFFECT MOBILITIES; FREE CHARGE CARRIERS; HYSTERESIS BEHAVIOR; LOW CONDUCTIVITY; NANO PARTICULATES; NITROGEN ATMOSPHERES; POLYMERIC ADDITIVES; RELEASE BEHAVIORS; SPACE CHARGE LIMITED CURRENTS; TIME-DEPENDENT CHARACTERISTICS; TRANSISTOR CHARACTERISTICS; TRANSISTOR PARAMETERS; TRAP DEPTH; TRAP STATE; ZINC OXIDE THIN FILMS; ZNO;

ADSORBATES; BEHAVIORAL RESEARCH; ELECTRIC PROPERTIES; HYSTERESIS; OXIDE FILMS; POLYMERS; THIN FILM TRANSISTORS; THIN FILMS; TRANSPORT PROPERTIES; ZINC; ZINC OXIDE;

POLYMER FILMS;

EID: 78650895155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3524184     Document Type: Article

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