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Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2312-2316

Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles

(7) Walther, S a Schafer S a Jank, M P M b Thiem, H c Peukert, W a Frey, L a,b Ryssel, H a,b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

c EVONIK DEGUSSA GMBH (Germany)

Author keywords

Nanoparticle; Printable electronics; Thin film transistor; Zinc oxide

Indexed keywords

ACTIVE LAYER; ANNEALING TEMPERATURES; DRY AIR; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; GASPHASE; NITROGEN ATMOSPHERES; PRINTABLE ELECTRONICS; PRINTED ELECTRONICS; ROUGH INTERFACES; SURFACE STATE; TRANSISTOR CHARACTERISTICS; ZNO NANOPARTICLES; ZNO PARTICLES;

CARRIER MOBILITY; GAS ADSORPTION; GASES; OXYGEN; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

NANOPARTICLES;

EID: 77955511744 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.03.009 Document Type: Article

Times cited : (23)

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