N-type single nanoparticle ZnO transistors processed at low temperature

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 460-463

  Wolff, Karsten ^a   Hilleringmann, Ulrich ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; INTEGRATION TECHNIQUES; LOW TEMPERATURES; METAL NANOGAP; NO ANNEALING; ON/OFF CURRENT RATIO; OPERATING VOLTAGE; SINGLE NANOPARTICLE; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; WATER BASED; ZNO; ZNO NANOPARTICLES; ZNO TRANSISTORS;

CARRIER MOBILITY; NANOPARTICLES; SEMICONDUCTING ZINC COMPOUNDS; SURFACE PLASMON RESONANCE; THIN FILM TRANSISTORS; ZINC OXIDE;

TRANSISTORS;

EID: 72849119329     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331373     Document Type: Conference Paper

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