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Si has a band gaenergy of 1.1 eV, and it is well known, in Si FETs, that the accumulation, the depletion, and the inversion of carriers take place within the thickness of a few tens of nanometer from the interface.
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Si has a band gap energy of 1.1 eV, and it is well known, in Si FETs, that the accumulation, the depletion, and the inversion of carriers take place within the thickness of a few tens of nanometer from the interface.
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