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Volumn 93, Issue 8, 2008, Pages

Influence of interface roughness on the performance of nanoparticulate zinc oxide field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; MESFET DEVICES; OXIDES; SEMICONDUCTING ZINC COMPOUNDS; TRANSISTORS; ZINC; ZINC OXIDE;

EID: 51349139857     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2972121     Document Type: Article
Times cited : (71)

References (23)
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    • For the recent progress on solution-processed organic FETs, see reviews:, 0935-9648 10.1002/adma.200501152, ();, Chem. Rev. (Washington, D.C.) 0009-2665 10.1021/cr0501386 107, 1066 (2007).
    • For the recent progress on solution-processed organic FETs, see reviews: H. Sirringhaus, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200501152 17, 2411 (2005); A. R. Murphy and J. M. J. Fŕchet, Chem. Rev. (Washington, D.C.) 0009-2665 10.1021/cr0501386 107, 1066 (2007).
    • (2005) Adv. Mater. (Weinheim, Ger.) , vol.17 , pp. 2411
    • Sirringhaus, H.1    Murphy, A.R.2    Fŕchet, J.M.J.3
  • 5
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    • 0036-8075 10.1126/science.286.5440.746.
    • B. A. Ridley, B. Nivi, and J. M. Jacobson, Science 0036-8075 10.1126/science.286.5440.746 286, 746 (1999).
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    • Ridley, B.A.1    Nivi, B.2    Jacobson, J.M.3
  • 6
    • 26444534432 scopus 로고    scopus 로고
    • 0036-8075 10.1126/science.1116703.
    • D. V. Talapin and C. B. Murray, Science 0036-8075 10.1126/science.1116703 310, 86 (2005).
    • (2005) Science , vol.310 , pp. 86
    • Talapin, D.V.1    Murray, C.B.2
  • 16
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    • 1530-6984 10.1021/nl051586w.
    • B. Sun and H. Sirringhaus, Nano Lett. 1530-6984 10.1021/nl051586w 5, 2408 (2005).
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    • Sun, B.1    Sirringhaus, H.2
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    • 0002-7863 10.1021/ja065242z.
    • B. Sun and H. Sirringhuas, J. Am. Chem. Soc. 0002-7863 10.1021/ja065242z 128, 16231 (2006).
    • (2006) J. Am. Chem. Soc. , vol.128 , pp. 16231
    • Sun, B.1    Sirringhuas, H.2
  • 23
    • 51349119865 scopus 로고    scopus 로고
    • Si has a band gaenergy of 1.1 eV, and it is well known, in Si FETs, that the accumulation, the depletion, and the inversion of carriers take place within the thickness of a few tens of nanometer from the interface.
    • Si has a band gap energy of 1.1 eV, and it is well known, in Si FETs, that the accumulation, the depletion, and the inversion of carriers take place within the thickness of a few tens of nanometer from the interface.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.