Memristive devices based on solution-processed ZnO nanocrystals

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 2, 2010, Pages 484-487

  Wang, Jianpu ^a   Sun, Baoquan ^a   Gao, Feng ^a   Greenham, Neil C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; CHEMICAL INTERACTIONS; CURRENT VOLTAGE; ELECTRICAL HYSTERESIS; FEATURE SIZES; LARGE SURFACE AREA; LOW-COST SOLUTION; NONVOLATILE MEMORY DEVICES; ORGANIC CIRCUITS; OXYGEN DEPLETION; SOLUTION-PROCESSED; ZNO NANOCRYSTAL;

NANOCRYSTALS; OXYGEN;

ZINC OXIDE;

EID: 76949098637     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925467     Document Type: Article

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