High performance low temperature solution-processed zinc oxide thin film transistor

Thin Solid Films

Volumn 519, Issue 16, 2011, Pages 5623-5628

  Theissmann, R ^a   Bubel, S ^a   Sanlialp, M ^a   Busch, C ^a   Schierning, G ^a   Schmechel, R ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Deposition from Solution; Printable electronics; Thin film transistor; Transparent conducting oxide; Zinc oxide

Indexed keywords

ANNEALING TEMPERATURES; AQUEOUS AMMONIA; AQUEOUS SOLUTIONS; CRYSTALLINE WATER; DEPOSITION FROM SOLUTIONS; DEVICE MOBILITIES; DIELECTRIC LAYER; LOW TEMPERATURES; ON/OFF RATIO; ONE STEP SYNTHESIS; PRINTABLE ELECTRONICS; PROCESS TEMPERATURE; SILICON DIOXIDE; SOLUTION-PROCESSED; TRANSPARENT CONDUCTING OXIDE; ZINC OXIDE THIN FILMS; ZNO;

AMORPHOUS FILMS; DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 79957994061     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.02.073     Document Type: Article

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