Electronic memory effects in diodes from a zinc oxide nanoparticle- polystyrene hybrid material

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Verbakel, Frank ^b   Meskers, Stefan C J ^a   Janssen, René A J ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DUTCH POLYMER INSTITUTE DPI   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRODES; NANOSTRUCTURED MATERIALS; POLYSTYRENES; SPIN COATING; ZINC OXIDE;

FORWARD BIAS VOLTAGES; MEMORY EFFECTS; POLYSTYRENE HYBRID MATERIALS; REVERSE BIAS VOLTAGES;

SEMICONDUCTOR DIODES;

EID: 33748505670     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345612     Document Type: Article

References (23)

1. Y. Yang, L. Ma, and J. Wu, MRS Bull. 29, 833 (2004).
2. J. C. Scott, Science 304, 62 (2004).
3. Y. Yang, J. Ouyang, L. Ma, R. J.-H. Tseng, and C.-W. Chu, Adv. Funct. Mater. 16, 1001 (2006).
4. L. D. Bozano, B. W. Kean, M. Beinhoff, K. R. Carter, P. M. Rice, and J. C. Scott, Adv. Funct. Mater. 15, 1933 (2005).
5. W. Tang, H. Z. Shi. G. Xu, B. S. Ong, Z. D. Popovic, J. C. Deng, J. Zhao, and G. H. Rao, Adv. Mater. (Weinheim, Ger.) 17, 2307 (2005).
6. T. Hada, K. Wasa, and S. Hayakawa, Jpn. J. Appl. Phys. 10, 521 (1971).
7. O. Hunter, Jr. and J. A. Schaefer, U.S. Patent 4,472,296 (18 September 1989).
8. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 33, 1129 (1970).
9. R. E. Thurstans and D. P. Oxley, J. Phys. D 35, 802 (2002).
10. W. J. E. Beek, M. M. Wienk, M. Kemerink, X. Yang, and R. A. J. Janssen, J. Phys. Chem. B 109, 9505 (2005).
11. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, J. Vac. Sci. Technol. B 22, 932 (2004).
12. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 41301 (2005).
13. W. J. E. Beek, M. M. Wienk, and R. A. J. Janssen, Adv. Funct. Mater. 16, 1112 (2006).
14. D. A. Melnick, J. Chem. Phys. 26, 1136 (1957).
15. R. J. Collins and D. G. Thomas, Phys. Rev. 112, 388 (1958).
16. R. Ghosh, B. Mallik, and D. Basak, Appl. Phys. A: Mater. Sci. Process. 81, 1281 (2005).
17. S. A. Studenikin, N. Golego, and M. Cocivera, J. Appl. Phys. 87, 2413 (2000).
18. M. Haase, H. Weller, and A. Henglein, J. Phys. Chem. 92, 482 (1988).
19. Q. H. Li, T. Gao, Y. G. Wang, and T. H. Wang, Appl. Phys. Lett. 86, 123117 (2005).
20. K. Keem, H. Kim, G.-T. Kim, J. S. Lee, B. Min, K. Cho, M.-Y. Sung, and S. Kim, Appl. Phys. Lett. 84, 4376 (2004).
21. M. S. Arnold, Ph. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B 107, 659 (2003).
22. S. E. Ahn, J. S. Lee, H. Kim, S. Kim, B. H. Kang, K. H. Kim, and G. T. Kim, Appl. Phys. Lett. 84, 5022 (2004).
23. H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, Adv. Mater. (Weinheim, Ger.) 14, 158 (2002).