-
1
-
-
43049126833
-
-
10.1038/nature06932
-
D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453 (7191), 80-83 (2008). 10.1038/nature06932
-
(2008)
Nature
, vol.453
, Issue.7191
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
2
-
-
76649133422
-
-
10.1038/nnano.2009.456
-
D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 5 (2), 148-153 (2010). 10.1038/nnano.2009.456
-
(2010)
Nat. Nanotechnol.
, vol.5
, Issue.2
, pp. 148-153
-
-
Kwon, D.-H.1
Kim, K.M.2
Jang, J.H.3
Jeon, J.M.4
Lee, M.H.5
Li, X.-S.6
Park, G.-S.7
Lee, B.8
Han, S.9
Kim, M.10
Hwang, C.S.11
-
3
-
-
67650102619
-
-
10.1002/adma.200900375
-
R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21 (25-26), 2632-2663 (2009). 10.1002/adma.200900375
-
(2009)
Adv. Mater.
, vol.21
, Issue.2526
, pp. 2632-2663
-
-
Waser, R.1
Dittmann, R.2
Staikov, G.3
Szot, K.4
-
4
-
-
46749093701
-
-
10.1038/nnano.2008.160
-
J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 3 (7), 429-433 (2008). 10.1038/nnano.2008.160
-
(2008)
Nat. Nanotechnol.
, vol.3
, Issue.7
, pp. 429-433
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, R.S.6
-
5
-
-
79151482768
-
-
10.1109/LED.2010.2091489
-
S.-G. Park, B. Magyari-Kope, and Y. Nishi, IEEE Electron Device Lett. 32 (2), 197-199 (2011). 10.1109/LED.2010.2091489
-
(2011)
IEEE Electron Device Lett.
, vol.32
, Issue.2
, pp. 197-199
-
-
Park, S.-G.1
Magyari-Kope, B.2
Nishi, Y.3
-
6
-
-
82555171565
-
-
10.1002/adfm.201101117
-
S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, and R. Waser, Adv. Funct. Mater. 21 (23), 4487-4492 (2011). 10.1002/adfm.201101117
-
(2011)
Adv. Funct. Mater.
, vol.21
, Issue.23
, pp. 4487-4492
-
-
Menzel, S.1
Waters, M.2
Marchewka, A.3
Böttger, U.4
Dittmann, R.5
Waser, R.6
-
7
-
-
67650455886
-
-
10.1109/LED.2009.2021003
-
W. Wang, S. Fujita, and S. S. Wong, IEEE Electron Device Lett. 30 (7), 763-765 (2009). 10.1109/LED.2009.2021003
-
(2009)
IEEE Electron Device Lett.
, vol.30
, Issue.7
, pp. 763-765
-
-
Wang, W.1
Fujita, S.2
Wong, S.S.3
-
8
-
-
67650621591
-
-
10.1109/LED.2009.2021001
-
W. Wang, S. Fujita, and S. S. Wong, IEEE Electron Device Lett. 30 (7), 733-735 (2009). 10.1109/LED.2009.2021001
-
(2009)
IEEE Electron Device Lett.
, vol.30
, Issue.7
, pp. 733-735
-
-
Wang, W.1
Fujita, S.2
Wong, S.S.3
-
9
-
-
79956149687
-
-
10.1088/0957-4484/22/25/254007
-
F. Miao, J. J. Yang, J. Borghetti, G. Medeiros-Ribeiro, and R. S. Williams, Nanotechnology 22 (25), 254007 (2011). 10.1088/0957-4484/22/25/254007
-
(2011)
Nanotechnology
, vol.22
, Issue.25
, pp. 254007
-
-
Miao, F.1
Yang, J.J.2
Borghetti, J.3
Medeiros-Ribeiro, G.4
Williams, R.S.5
-
10
-
-
77956193489
-
-
10.1063/1.3467461
-
S. Kim, H. Y. Jeong, S.-Y. Choi, and Y.-K. Choi, Appl. Phys. Lett. 97, 033508 (2010). 10.1063/1.3467461
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 033508
-
-
Kim, S.1
Jeong, H.Y.2
Choi, S.-Y.3
Choi, Y.-K.4
-
11
-
-
68349158917
-
-
10.1109/TED.2009.2024046
-
C. Cagli, F. Nardi, and D. Ielmini, IEEE Trans. Electron Devices 56 (8), 1712-1720 (2009). 10.1109/TED.2009.2024046
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.8
, pp. 1712-1720
-
-
Cagli, C.1
Nardi, F.2
Ielmini, D.3
-
12
-
-
82155166369
-
-
10.1109/TED.2011.2167513
-
D. Ielmini, IEEE Trans. Electron Devices 58 (12), 4309-4317 (2011). 10.1109/TED.2011.2167513
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.12
, pp. 4309-4317
-
-
Ielmini, D.1
-
13
-
-
66649107847
-
-
10.1002/smll.200801323
-
D. B. Strukov, J. L. Borghetti, and R. S. Williams, Small 5 (9), 1058-1063 (2009). 10.1002/smll.200801323
-
(2009)
Small
, vol.5
, Issue.9
, pp. 1058-1063
-
-
Strukov, D.B.1
Borghetti, J.L.2
Williams, R.S.3
-
15
-
-
59849099356
-
-
10.1109/TED.2008.2010583
-
U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 56 (2), 186-192 (2009). 10.1109/TED.2008.2010583
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.2
, pp. 186-192
-
-
Russo, U.1
Ielmini, D.2
Cagli, C.3
Lacaita, A.L.4
-
16
-
-
84864751007
-
-
10.1109/TED.2012.2199497
-
D. Ielmini, F. Nardi, and S. Balatti, IEEE Trans. Electron Devices 59 (8), 2049-2056 (2012). 10.1109/TED.2012.2199497
-
(2012)
IEEE Trans. Electron Devices
, vol.59
, Issue.8
, pp. 2049-2056
-
-
Ielmini, D.1
Nardi, F.2
Balatti, S.3
-
17
-
-
84867559940
-
-
in (IEEE)
-
G. Bersuker, D. Gilmer, D. Veksler, J. Yum, H. Park, S. Lian, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, in 2010 IEEE International Electron Devices Meeting (IEDM) (IEEE, 2010), pp. 456-459.
-
(2010)
2010 IEEE International Electron Devices Meeting (IEDM)
, pp. 456-459
-
-
Bersuker, G.1
Gilmer, D.2
Veksler, D.3
Yum, J.4
Park, H.5
Lian, S.6
Vandelli, L.7
Padovani, A.8
Larcher, L.9
McKenna, K.10
-
18
-
-
84861720646
-
-
10.1063/1.3699369
-
S. Long, C. Cagli, D. Ielmini, M. Liu, and J. Suñé, J. Appl. Phys. 111 (7), 074508 (2012). 10.1063/1.3699369
-
(2012)
J. Appl. Phys.
, vol.111
, Issue.7
, pp. 074508
-
-
Long, S.1
Cagli, C.2
Ielmini, D.3
Liu, M.4
Suñé, J.5
-
19
-
-
84855306489
-
-
10.1063/1.3671565
-
G. Bersuker, D. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, J. Appl. Phys. 110 (12), 124518 (2011). 10.1063/1.3671565
-
(2011)
J. Appl. Phys.
, vol.110
, Issue.12
, pp. 124518
-
-
Bersuker, G.1
Gilmer, D.2
Veksler, D.3
Kirsch, P.4
Vandelli, L.5
Padovani, A.6
Larcher, L.7
McKenna, K.8
Shluger, A.9
Iglesias, V.10
-
20
-
-
77955721384
-
-
10.1063/1.3467854
-
H. Y. Jeong, J. Y. Lee, and S.-Y. Choi, Appl. Phys. Lett. 97 (4), 042109 (2010). 10.1063/1.3467854
-
(2010)
Appl. Phys. Lett.
, vol.97
, Issue.4
, pp. 042109
-
-
Jeong, H.Y.1
Lee, J.Y.2
Choi, S.-Y.3
-
21
-
-
84863170165
-
-
10.1063/1.3685222
-
K. Kamiya, M. Young Yang, S.-G. Park, B. Magyari-Kope, Y. Nishi, M. Niwa, and K. Shiraishi, Appl. Phys. Lett. 100 (7), 073502 (2012). 10.1063/1.3685222
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.7
, pp. 073502
-
-
Kamiya, K.1
Young Yang, M.2
Park, S.-G.3
Magyari-Kope, B.4
Nishi, Y.5
Niwa, M.6
Shiraishi, K.7
-
22
-
-
84873293107
-
-
10.1557/jmr.2012.231
-
S. K. Kim, K. M. Kim, D. S. Jeong, W. Jeon, K. J. Yoon, and C. S. Hwanga, J. Mater. Res. 28 (3), 313-325 (2013). 10.1557/jmr.2012.231
-
(2013)
J. Mater. Res.
, vol.28
, Issue.3
, pp. 313-325
-
-
Kim, S.K.1
Kim, K.M.2
Jeong, D.S.3
Jeon, W.4
Yoon, K.J.5
Hwanga, C.S.6
-
23
-
-
77955732575
-
-
10.1002/adma.201000186
-
J. P. Strachan, M. D. Pickett, J. J. Yang, S. Aloni, A. David Kilcoyne, G. Medeiros-Ribeiro, and R. Stanley Williams, Adv. Mater. 22 (32), 3573-3577 (2010). 10.1002/adma.201000186
-
(2010)
Adv. Mater.
, vol.22
, Issue.32
, pp. 3573-3577
-
-
Strachan, J.P.1
Pickett, M.D.2
Yang, J.J.3
Aloni, S.4
David Kilcoyne, A.5
Medeiros-Ribeiro, G.6
Stanley Williams, R.7
-
25
-
-
70549106464
-
-
10.1109/LED.2009.2032308
-
B. Gao, B. Sun, H. Zhang, L. Liu, X. Liu, R. Han, J. Kang, and B. Yu, IEEE Electron Device Lett. 30 (12), 1326-1328 (2009). 10.1109/LED.2009.2032308
-
(2009)
IEEE Electron Device Lett.
, vol.30
, Issue.12
, pp. 1326-1328
-
-
Gao, B.1
Sun, B.2
Zhang, H.3
Liu, L.4
Liu, X.5
Han, R.6
Kang, J.7
Yu, B.8
-
27
-
-
84867550785
-
-
10.1063/1.4757584
-
D. Li, M. Li, F. Zahid, J. Wang, and H. Guo, J. Appl. Phys. 112 (7), 073512 (2012). 10.1063/1.4757584
-
(2012)
J. Appl. Phys.
, vol.112
, Issue.7
, pp. 073512
-
-
Li, D.1
Li, M.2
Zahid, F.3
Wang, J.4
Guo, H.5
-
28
-
-
80051597863
-
-
10.1063/1.3622665
-
S. Savelev, A. Alexandrov, A. Bratkovsky, and R. Stanley Williams, Appl. Phys. Lett. 99 (5), 053108 (2011). 10.1063/1.3622665
-
(2011)
Appl. Phys. Lett.
, vol.99
, Issue.5
, pp. 053108
-
-
Savelev, S.1
Alexandrov, A.2
Bratkovsky, A.3
Stanley Williams, R.4
-
29
-
-
79956128377
-
-
10.1088/0957-4484/22/25/254011
-
S. Savelev, A. Alexandrov, A. Bratkovsky, and R. S. Williams, Nanotechnology 22 (25), 254011 (2011). 10.1088/0957-4484/22/25/254011
-
(2011)
Nanotechnology
, vol.22
, Issue.25
, pp. 254011
-
-
Savelev, S.1
Alexandrov, A.2
Bratkovsky, A.3
Williams, R.S.4
-
30
-
-
70350092588
-
-
10.1063/1.3236506
-
M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, and R. S. Williams, J. Appl. Phys. 106 (7), 074508 (2009). 10.1063/1.3236506
-
(2009)
J. Appl. Phys.
, vol.106
, Issue.7
, pp. 074508
-
-
Pickett, M.D.1
Strukov, D.B.2
Borghetti, J.L.3
Yang, J.J.4
Snider, G.S.5
Stewart, D.R.6
Williams, R.S.7
-
33
-
-
67649143212
-
-
10.1088/0957-4484/20/21/215201
-
J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, and R. S. Williams, Nanotechnology 20 (21), 215201 (2009). 10.1088/0957-4484/20/21/215201
-
(2009)
Nanotechnology
, vol.20
, Issue.21
, pp. 215201
-
-
Yang, J.J.1
Miao, F.2
Pickett, M.D.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Lau, C.N.6
Williams, R.S.7
|