Elimination of forming process for TiOx nonvolatile memory devices

IEEE Electron Device Letters

Volumn 30, Issue 7, 2009, Pages 763-765

  Wang, Wei ^a   Fujita, Shinobu ^b   Wong, S Simon ^a  

^a Stanford University   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Forming; In situ fabrication; Nonvolatile memory (NVM); Titanium oxide

Indexed keywords

FORMING PROCESS; HIGH-VOLTAGE; IN SITU FABRICATION; MEMORY DEVICE; NONVOLATILE MEMORY (NVM); NONVOLATILE MEMORY DEVICES; PHYSICAL MECHANISM;

ELECTRIC POTENTIAL; FABRICATION; NONVOLATILE STORAGE; TITANIUM;

TITANIUM OXIDES;

EID: 67650455886     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2021003     Document Type: Article

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