Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon

Journal of Crystal Growth

Volumn 372, Issue 1, 2013, Pages 15-18

  Shin, Jae Cheol ^a   Kim, Do Yang ^b,c   Lee, Ari ^a   Kim, Hyo Jin ^a   Kim, Jae Hun ^c   Choi, Won Jun ^c   Kim, Hyun Seok ^d   Choi, Kyoung Jin ^b  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

^d Dongguk University   (South Korea)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

CORE SHELL STRUCTURE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; IN COMPOSITIONS; NANOWIRES (NWS); SEMI CONDUCTING III-V MATERIALS; SI (1 1 1); V/III RATIO; VAPOR-SOLID;

ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES;

VAPORS;

EID: 84875867673     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.02.025     Document Type: Article

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