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Volumn 4, Issue 10, 2004, Pages 1961-1964

Role of surface diffusion in chemical beam epitaxy of InAs nanowires

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; DIFFUSION; GOLD; INDIUM COMPOUNDS; LITHOGRAPHY; NUCLEATION; SUBSTRATES;

EID: 7544245915     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl048825k     Document Type: Article
Times cited : (334)

References (25)
  • 21
    • 7544247219 scopus 로고    scopus 로고
    • note
    • This is below the eutectic point of Au-In (454°C) and of Au-In-As (580°C, unpublished calculations). However, these experiments do not prove whether the particle is solid or liquid during growth. In any case the particle still enhances the wire growth.
  • 22
    • 7544220961 scopus 로고    scopus 로고
    • note
    • -4 mbar, meaning that the source molecules impinge as homogeneous beams perpendicular to the sample surface. Thus, no gas phase exists, which results in a precise control of the material reaching the sample.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.