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Volumn 12, Issue 11, 2012, Pages 5686-5692

Indium incorporation in in xGa 1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

Author keywords

[No Author keywords available]

Indexed keywords

APPARENT ACTIVATION ENERGY; AS-GROWN; IN-SITU CONTROL; LINE-OF-SIGHT; NANOWIRE HETEROSTRUCTURES; PLANAR LAYERS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUADRUPOLE MASS SPECTROMETRY; THERMALLY ACTIVATED;

EID: 84868705042     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg301181b     Document Type: Article
Times cited : (16)

References (48)
  • 1
    • 84889452940 scopus 로고    scopus 로고
    • WILEY-VCH Verlag: Weinheim, Germany, (Material Properties, Physics and Growth)
    • Morkoç, H. Handbook of Nitride Semiconductors and Devices; WILEY-VCH Verlag: Weinheim, Germany, 2008; Vol. 1 (Material Properties, Physics and Growth).
    • (2008) Handbook of Nitride Semiconductors and Devices , vol.1
    • Morkoç, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.