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Volumn 5, Issue 3, 2005, Pages 457-460

Controlled growth of Si nanowire arrays for device integration

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COLLOIDS; EPITAXIAL GROWTH; EVAPORATION; FIELD EFFECT TRANSISTORS; GOLD COMPOUNDS; LITHOGRAPHY; PHOTORESISTS; POLYELECTROLYTES; REACTIVE ION ETCHING; SEMICONDUCTOR GROWTH; SILICON; SILICONES; SYNTHESIS (CHEMICAL); THERMOELECTRICITY;

EID: 16244388903     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl047990x     Document Type: Article
Times cited : (637)

References (26)
  • 14
    • 0002992361 scopus 로고
    • VLS mechanism of crystal growth
    • Levitt, A. P., Ed.; Wiley-Interscience: New York
    • Wagner, R. S. VLS Mechanism of Crystal Growth, in Whisker Technology, Levitt, A. P., Ed.; Wiley-Interscience: New York, 1970; pp 47-119.
    • (1970) Whisker Technology , pp. 47-119
    • Wagner, R.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.