Growth of III-V semiconductor nanowires by molecular beam epitaxy

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 442-445

  Jabeen, F ^a,b   Rubini, S ^a   Martelli, F ^a  

^a LABORATORIO TASC   (Italy)

^b SINCROTRONE TRIESTE   (Italy)

Author keywords

Electron microscopy; GaAs; InAs; Molecular beam epitaxy; Nanowires

Indexed keywords

CRYSTAL GROWTH; ELECTRIC WIRE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICON COMPOUNDS; SUBSTRATES;

DIFFERENT SUBSTRATES; GAAS; III-V SEMICONDUCTORS; INAS; SI (1 1 1);

GALLIUM ALLOYS;

EID: 61349190979     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.001     Document Type: Article

References (15)

1. Li Y., Qian F., Xiang J., and Lieber C. Nanowire electronic and optoelectronic devices. Mater. Today 9 (2006) 18-27
2. W. Liu, C.M. Lieber, Semiconductor nanowires, J. Phys. D.: Appl. Phys., 39 (2006) R387-R406. A recent review.
3. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89-90
4. Harmand J.C., Patriarche G., Péré-Laperne N., Mérat-Combes M.-N., Travers L., and Glas F. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth. Appl. Phys. Lett. 87 (2005) 203101 (pp. 1-3)
5. Dubrovskii V.G., Cirlin G.E., Soshnikov I.P., Tonkikh A.A., Sibirev N.V., Samsonenko Yu.B., and Ustinov V.M. Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: theory and experiment. Phys. Rev. B 71 (2005) 205325 (pp. 1-6)
6. Ihn S.-G., Songa J.-I., Kim Y.-H., and Lee J.Y. GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy. Appl. Phys. Lett. 89 (2006) 053106 (pp. 1-3)
7. Piccin M., Bais G., Grillo V., Jabeen F., De Franceschi S., Carlino E., Lazzarino M., Romanato F., Businaro L., Rubini S., Martelli F., and Franciosi A. Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires. Physica E 37 (2007) 134-137
8. Ihn S.-G., and Song J.-I. InAs nanowires on Si substrates grown by solid source molecular beam epitaxy. Nanotechnology 18 (2007) 355603
9. Wu Z.H., Sun M., Mei X.Y., and Ruda H.E. Growth and photoluminescence characteristics of AlGaAs nanowires. Appl. Phys. Lett. 85 (2004) 657-659
10. Chen C., Shehata S., Fradin C., LaPierre R., Couteau C., and Weihs G. Self-directed growth of AlGaAs core-shell nanowires for visible light applications. Nano Lett. 7 (2007) 2584-2589
11. Chen C., Braidy N., Couteau C., Fradin C., Weihs G., and LaPierre R. Multiple quantum well AlGaAs nanowires. Nano Lett. 8 (2008) 495-499
12. x/GaP double heterostructure nanowires for optical applications. Nanotechnology 16 (2005) 936-939
13. Kuykendall T., Ulrich P., Aloni S., and Yang P. Complete composition tunability of InGaN nanowires using a combinatorial approach. Nat. Mater. 6 (2007) 951-956
14. Kim Y., Joyce H.J., Gao Q., Hoe Tan H., Jagadish C., Paladugu M., Zou J., and Suvorova A.A. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires. Nano Lett. 6 (2006) 599-604
15. x nanowires for device engineering. Nano Lett. 6 (2006) 403-407