Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth

Nano Letters

Volumn 12, Issue 6, 2012, Pages 2839-2845

  Madaria, Anuj R ^a   Yao, Maoqing ^a   Chi, Chunyung ^a   Huang, Ningfeng ^a   Lin, Chenxi ^a   Li, Ruijuan ^a   Povinelli, Michelle L ^a   Dapkus, P Daniel ^a   Zhou, Chongwu ^a  

^a University of Southern California ^*  (United States)

Author keywords

GaAs nanowires; light absorption; nanosphere lithography; selected area MOCVD; simulation

Indexed keywords

CATALYST-FREE; DEFECT-FREE; GAAS; HIGH-THROUGHPUT; LIGHT UTILIZATION; NANO SPHERE LITHOGRAPHY; NANOWIRE ARRAYS; NANOWIRE SYNTHESIS; OPTICAL PERFORMANCE; ORDERED NANOWIRE ARRAYS; ORDERED NANOWIRES; PHOTOVOLTAIC APPLICATIONS; SCALABLE APPROACH; SCALABLE SYNTHESIS; SEMICONDUCTING NANOWIRES; SIMULATION; SOLAR SPECTRUM; STRUCTURAL FEATURE; VERTICALLY ALIGNED; VISIBLE RANGE; WAFER-SCALE;

DEFECTS; GALLIUM ARSENIDE; LIGHT ABSORPTION; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSPHERES; OPTIMIZATION; OPTOELECTRONIC DEVICES; POLYSTYRENES; SEMICONDUCTING GALLIUM;

NANOWIRES;

NANOSPHERE; NANOTUBE;

ARTICLE; CHEMISTRY; LIGHT; MATERIALS TESTING; METHODOLOGY; MOLECULAR IMPRINTING; RADIATION EXPOSURE; ULTRASTRUCTURE;

LIGHT; MATERIALS TESTING; MOLECULAR IMPRINTING; NANOSPHERES; NANOTUBES;

EID: 84862281754     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300341v     Document Type: Article

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