Tapering control of Si nanowires grown from SiCl4 at reduced pressure

ACS Nano

Volumn 5, Issue 1, 2011, Pages 656-664

  Krylyuk, Sergiy ^a   Davydov, Albert V ^a   Levin, Igor ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Silicon nanowires; Tapering; Vertical alignment

Indexed keywords

CONTROLLED SHAPE; DEVICE APPLICATION; GROWTH CONDITIONS; GROWTH MECHANISMS; GROWTH PRESSURE; KINETIC EFFECT; MOLAR RATIO; ORDERS OF MAGNITUDE; PROCESS CONDITION; RADIAL GROWTH; REDUCED PRESSURE; SI NANOWIRE; SILICON NANOWIRES; TAPERING; TWO STAGE; VAPOR-LIQUID-SOLID; VAPOR-SOLID; VERTICAL ALIGNMENT;

ALIGNMENT; CHEMICAL VAPOR DEPOSITION; GROWTH RATE; SILICON; VAPORS;

NANOWIRES;

EID: 79953246373     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn102556s     Document Type: Article

References (44)

1. Bai, X. D.; Zhi, C. Y.; Liu, S.; Wang, E. G.; Wang, Z. L. High- Density Uniformly Aligned Silicon Nanotip Arrays and Their Enhanced Field Emission Characteristics. Solid State Commun. 2003, 125, 185-188.
2. Chuen, Y. L.; Chou, L. J.; Hsu, C. M.; Kung, S. C. Synthesis and Characterization of Taper- and Rodlike Si Nanowires on SixGe1-x Substrate. J. Phys. Chem. B 2005, 109, 21831-21835. (Pubitemid 41784815)
3. Fang, X.; Bando, Y.; Gautam, U. K.; Ye, C.; Golberg, D. Inorganic Semiconductor Nanostructures and Their Field- Emission Applications. J. Mater. Chem. 2008, 18, 509-522.
4. Cao, L.; Nabet, B.; Spanier, J. E. Enhanced Raman Scattering from Individual Semiconductor Nanocones and Nanowires. Phys. Rev. Lett. 2006, 96, 157402.
5. Hashiguchi, G.; Goda, T.; Hosogi, M.; Hirano, K.; Kaji, N.; Baba, Y.; Kakushima, K.; Fujita, H. DNA Manipulation and Retrieval from an Aqueous Solution with Micromachined Nanotweezers. Anal. Chem. 2003, 75, 4347-4350. (Pubitemid 37082220)
6. Yamahata, C.; Collard, D.; Legrand, B.; Takekawa, T.; Kumemura, M.; Hashiguchi, G.; Fujita, H. Silicon Nanotweezers with Subnanometer Resolution for the Micromanipulation of Biomolecules. J. Microelectromech. Syst. 2008, 17, 623-631.
7. Wei, C.; Srivastava, D. Nanomechanics of Carbon Nanofibers: Structural and Elastic Properties. Appl. Phys. Lett. 2004, 85, 2208.
8. Wu, Z.; Neaton, J. B.; Grossman, J. C. Quantum Confinement and Electronic Properties of Tapered Silicon Nanowires. Phys. Rev. Lett. 2008, 100, 246804.
9. Zhu, J.; Yu, Z.; Burkhard, G. F.; Hsu, C.-M.; Connor, S. T.; Xu, Y.; Wang, Q.; McGehee, M.; Fan, S; Cui, Y. Optical Absorption Enhancement in Amorphous Silicon Nanowire and Nanocone Arrays. Nano Lett. 2009, 9, 279-282.
10. Hannon, J. B.; Kodambaka, S.; Ross, F. M.; Tromp, R. M. The Influence of the Surface Migration of Gold on the Growth of Silicon Nanowires. Nature 2006, 440, 69-71. (Pubitemid 43336267)
11. Bae, J.; Kulkarni, N. N.; Zhou, J. P.; Ekerdt, J. G.; Shih, C.-K. VLS Growth of Si Nanocones Using Ga and Al Catalysts. J. Cryst. Growth 2008, 310, 4407-4411.
12. Givargizov, E. I. Fundamental Aspects of VLS Growth. J. Cryst. Growth 1975, 31, 20-30.
13. Bootsma, G. A.; Gassen, H. J. A Quantitative Study on the Growth of Silicon Whiskers from Silane and Germanium Whiskers from Germane. J. Cryst. Growth 1971, 10, 223-234.
14. Sharma, S.; Kamins, T. I.; Williams, R. S. Diameter Control of Ti-Catalyzed Silicon Nanowires. J. Cryst. Growth 2004, 267, 613-618.
15. Aella, P.; Ingole, S.; Petuskey, W. T.; Picraux, S. T. Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence. Adv. Mater. 2007, 19, 2603-2607. (Pubitemid 47481821)
16. Wang, Y.; Schmidt, V.; Senz, S.; Gö sele, U. Epitaxial Growth of Silicon Nanowires Using an Aluminium Catalyst. Nat. Nanotechnol. 2006, 1, 186-189.
17. Cao, L.; Garipcan, B.; Atchison, J. S.; Ni, C.; Nabet, B.; Spanier, J. E. Instability and Transport of Metal Catalyst in the Growth of Tapered Silicon Nanowires. Nano Lett. 2006, 6, 1852-1857. (Pubitemid 44555220)
18. 2. J. Electrochem. Soc. 1980, 127, 1836-1843. (Pubitemid 11444090)
19. Wagner, R. S.; Ellis, W. C. The Vapor-Liquid-Solid Mechanism of Crystal Growth and Its Application to Silicon. Trans. Met. Soc. AIME 1965, 233, 1053-1064.
20. Sirtl, E.; Hunt, L. P.; Sawyer, D. H. High Temperature Reactions in the Silicon-Hydrogen-Chlorine System. J. Electrochem. Soc. 1974, 121, 919-925.
21. Hochbaum, A. I.; Fan, R.; He, R.; Yang, P. Controlled Growth of Si Nanowire Arrays for Device Integration. Nano Lett. 2005, 5, 457-460. (Pubitemid 40449715)
22. Kayes, B. M.; Filler, M. A.; Putnam, M. C.; Kelzenberg, M. D.; Lewis, N. S.; Atwater, H. A. Growth of Vertically Aligned Si Wire Arrays Over Large Areas (1 cm2) with Au and Cu Catalysts. Appl. Phys. Lett. 2007, 91, 103110.
23. Givargizov, E. I.; Sheftal, N. N. Morphology of Silicon Whiskers Grown by the VLS-Technique. J. Cryst. Growth 1971, 9, 326-329.
24. Garnett, E. C.; Liang, W.; Yang, P. Growth and Electrical Characteristics of Platinum-Nanoparticle-Catalyzed Silicon Nanowires. Adv. Mater. 2007, 19, 2946-2950. (Pubitemid 47597893)
25. Jeong, H.; Park, T. E.; Seong, H. K.; Kim, M.; Kim, U.; Choi, H. J. Growth Kinetics of Silicon Nanowires by Platinum Assisted Vapour-Liquid-Solid Mechanism. Chem. Phys. Lett. 2009, 467, 331-334.
26. Doerk, G. S.; Ferralis, N.; Carraro, C.; Maboudian, R. Growth of Branching Si Nanowires Seeded by Au-Si Surface Migration. J. Mater. Chem. 2008, 18, 5376-5381.
27. Kodambaka, S.; Hannon, J. B.; Tromp, R. M.; Ross, F. M. Control of Si Nanowire Growth by Oxygen. Nano Lett. 2006, 6, 1292-1296. (Pubitemid 44013497)
28. Duchemin, M. J.-P.; Bonnet, M. M.; Koelsch, M. F. Kinetics of Silicon Growth under Low Hydrogen Pressure. J. Electrochem. Soc. 1978, 125, 637-644. (Pubitemid 8608236)
29. The radial GR was also estimated directly from SEM images using Rrad -(db-dt)/2t, where t is the growth time; both approaches yielded essentially the same results.
30. 2 system. J. Cryst. Growth 1982, 57, 177-184.
31. Lew, K.-K.; Redwing, J. M. Growth Characteristics of Silicon Nanowires Synthesized by Vapor-Liquid-Solid Growth in Nanoporous Alumina Templates. J. Cryst. Growth 2003, 254, 14-22.
32. Oehler, F.; Gentile, P.; Baron, T.; Ferret, P. The Effects of HCl on Silicon Nanowire Growth: Surface Chlorination and Existence of a 'Diffusion-Limited Minimum Diameter'. Nanotechnology 2009, 20, 475307.
33. den Hertog, M. I.; Rouviere, J. L.; Dhalluin, F.; Desré , P. J.; Gentile, P.; Ferret, P.; Oehler, F.; Baron, T. Control of Gold Surface Diffusion on Si Nanowires. Nano Lett. 2008, 8, 1544-1550.
34. Büttner, C. C.; Langner, A.; Geuss, M.; Müller, F.; Werner, P.; Gösele, U. Formation of Straight 10 nm Diameter Silicon Nanopores in Gold Decorated Silicon. ACS Nano 2009, 3, 3122-3126.
35. Ge, Sh.; Jiang, K.; Lu, X.; Chen, Ya.; Wang, R.; Fan, Sh. Orientation-Controlled Growth of Single-Crystal Silicon- Nanowire Arrays. Adv. Mater. 2005, 17, 56-61. (Pubitemid 40178447)
36. 3H and SiCl
37. Sakurai, S.; Nakayama, T. Adsorption, Diffusion and Desorption of Cl Atoms on Si(111) Surfaces. J. Cryst. Growth 2002, 237-239, 212-216. (Pubitemid 34544252)
38. Shudo, K.; Kirimura, T.; Tanaka, Y.; Ishikawa, T.; Tanaka, M. Quantitative Analysis of Thermally Induced Desorption During Halogen-Etching of a Silicon (111) Surface. Surf. Sci. 2006, 600, 3147-3153. (Pubitemid 44294892)
39. Wagner, R. S. A Solid-Liquid-Vapor Etching Process. J. Cryst. Growth 1968, 3-4, 159-161.
40. Hunt, L. P.; Sirtl, E. A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine System. J. Electrochem. Soc. 1972, 119, 1741-1745.
41. Bloem, J.; Oei, Y. S.; De Moor, H.H. C.; Hanssen, J. H. L.; Giling, L. J. Near Equilibrium Growth of Silicon by CVD I. The Si-Cl-H System. J. Cryst. Growth 1983, 65, 399-405. (Pubitemid 15591223)
42. Schmidt, V.; Senz, S.; Gö sele, U. Diameter Dependence of the Growth Velocity of Silicon Nanowires Synthesized via the Vapor-Liquid-Solid Mechanism. Phys. Rev. B 2007, 75, 045335.
43. Chernov, A. A. Growth Kinetics and Capture of Impurities During Gas Phase Crystallization. J. Cryst. Growth 1977, 42, 55-76.
44. Chernov, A. A.; Rusaikin, M. P. Theoretical Analysis of Equilibrium Adsorption Layers in CVD Systems (Si-H-Cl, Ga-As-H-Cl). J. Cryst. Growth 1978, 45, 73-81.