Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures

Nanotechnology

Volumn 22, Issue 8, 2011, Pages

  Lysov, A ^a   Offer, M ^a   Gutsche, C ^a   Regolin, I ^a   Topaloglu, S ^b   Geller, M ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b MALTEPE UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; ELECTROLUMINESCENCE EMISSION; ELECTROLUMINESCENCE SPECTRA; EMISSION LINES; GAAS; GAAS NANOWIRES; HEAVILY DOPED; MEMORY EFFECTS; METAL-ORGANIC VAPOR PHASE EPITAXY; MICROPHOTOLUMINESCENCE; NANOWIRE ARRAYS; NANOWIRE STRUCTURES; P-N JUNCTION; PHOTON EMISSIONS; SHOULDER PEAKS; SINGLE NANOWIRES; TWO-LINE; VAPOR-LIQUID-SOLID GROWTH MECHANISM;

DOPING (ADDITIVES); ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; ORGANOMETALLICS; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; VAPORS;

NANOWIRES;

EID: 79251567369     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/8/085702     Document Type: Article

References (22)

1. International Technology Roadmap for Semiconductors http://www.itrs.net
2. Bohr M T 2002 Nanotechnology goals and challenges for electronic applications IEEE Trans. Nanotechnol. 1 56-62
3. Gudiksen M S, Lauhon L J, Wang J, Smith D C and Lieber C M 2002 Growth of nanowire superlattice structures for nanoscale photonics and electronics Nature 415 617-20
4. Minot E D, Kelkensberg F, van Kouwen M, van Dam J A, Kouwenhoven L P, Zwiller V, Borgström M, Wunnicke O, Verheijen M A and Bakkers E P A M 2007 Single quantum dot nanowire LEDs Nano Lett. 7 367-71
5. Borgström M T, Norberg E, Wickert P, Nilsson H A, Trä gardh J, Dick K A, Statkute G, Ramvall P, Deppert K and Samuelson L 2008 Precursor evaluation for in situ InP nanowire doping Nanotechnology 19 445602
6. Tomioka K, Motohisa J, Hara S, Hiruma S and Fukui T 2010 GaAs/AlGaAs core multi shell nanowire-based light-emitting diodes on Si Nano Lett. 10 1639-44
7. Colombo C, Heiß M, Grätzel M and Fontcuberta i Morral A 2009 Gallium arsenide p-i-n radial structures for photovoltaic applications Appl. Phys. Lett. 94 173108
8. Svensson C P T, Martensson T, Trägardh J, Larsson C, Rask M, Hessman D, Samuelson L and Ohlsson J 2008 Monolithic GaAs/InGaP nanowire light emitting diodes on silicon Nanotechnology 19 305201
9. Kim H-M, Cho Y-H, Lee H, Kim S I, Ryu S R, Kim D Y, Kang T W and Chung K S 2004 High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays Nano Lett. 4 1059-62
10. Givargizov E I 1975 Fundamental aspects of VLS growth J. Cryst. Growth 31 20-30
11. Haraguchi K, Katsuyama T, Hiruma K and Ogawa K 1992 GaAs p-n junction formed in quantum wire crystals Appl. Phys. Lett. 60 745-7
12. Haraguchi K, Katsuyama T and Hiruma K 1994 Polarization dependence of light emitted from GaAs p-n junctions in quantum wire crystals J. Appl. Phys. 75 4220-5
13. Gutsche C, Regolin I, Blekker K, Lysov A, Prost W and Tegude F-J 2009 Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth J. Appl. Phys. 105 024305
14. Gutsche C, Lysov A, Regolin I, Blekker K, Prost W and Tegude F-J 2010 n-type doping of vapor-liquid-solid grown GaAs nanowires Nanoscale Res. Lett. doi:10.1007/s11671-010-9815-7
15. Joyce H J, Gao Q, Tan H H, Jagadish C, Kim Y, Zhang X, Guo Y and Zou J 2007 Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process Nano Lett. 7 921-6
16. Regolin I, Gutsche C, Lysov A, Blekker K, Li Z-A, Spasova M, Prost W and Tegude F-J 2010 Axial pn-junctions formed by MOVPE using DEZn and TESn in vapour-liquid-solid grown GaAs nanowires J. Cryst. Growth doi:10.1016/j. jcrysgro.2010.08.028
17. Chen H D, Feng M S, Chen P A, Lin K C and Wu C C 1994 Low-temperature luminescent properties of degenerate p-type GaAs grown by low-pressure metalorganic chemical vapor deposition J. Appl. Phys. 75 2210-4
18. Borghs G, Bhattacharyya K, Deneffe K, van Mieghem P and Mertens R 1989 Band-gap narrowing in highly doped n-and p-type GaAs studied by photoluminescence spectroscopy J. Appl. Phys. 66 4381-6
19. Pankove J I 1971 Optical Processes in Semiconductors (New York: Dover)
20. Nathan M I and Morgan T N 1966 Excitation dependence of photoluminescence in n-and p-type compensated GaAs Proc. Int. Conf. on Quantum Electronics p 478
21. Pankove J I 1962 Tunneling-assisted photon emission in gallium arsenide pn junctions Phys. Rev. Lett. 9 283-5
22. Casey H C and Silversmith D J 1969 Radiative tunneling in GaAs abrupt asymmetrical junctions J. Appl. Phys. 40 241-56x