Low-temperature growth of GaAs with high quality by metalorganic vapor phase epitaxy

Journal of Physics: Conference Series

Volumn 165, Issue , 2009, Pages

  Sakaguchi, Harunori ^a   Mishima, Tomoyoshi ^a   Meguro, Takeshi ^a   Fujiwara, Yasufumi ^b  

^a HITACHI CABLE LTD   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67650672409     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/165/1/012024     Document Type: Conference Paper

References (4)

1. Reep D H and Ghandhi S K 1983 J.Electrochem.Soc. 130 675
2. Tsuchiya T, Nagai H, Meguro T and Sakaguchi H 1994 J. Cryst. Growth 145 403
3. Otoki Y, Sahara M, Nagai H, Sakaguchi H, Takahashi S and Kuma S 1997 Mater.Sci.Eng. B 44 8
4. Otoki Y, Kamogawa H, Meguro T, Kashiwa M and Sakaguchi H 1998 Digest MANTEC98 137