Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals

Journal of Crystal Growth

Volumn 219, Issue 4, 2000, Pages 481-484

  Naoi, H ^a   Shaw, D M ^b   Collins, G J ^b   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Engineering Research Center and Hydraulics Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS; SINGLE CRYSTALS; SUBSTRATES; THERMOANALYSIS;

HETEROEPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0034325641     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00769-7     Document Type: Article

References (5)

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2. Fehsenfeld F.C., Evenson K.M., Broida H.P. Rev. Sci. Instr. 36:1965;294.
3. Ma K.Y., Fang Z.M., Cohen R.M., Stringfellow G.B. J. Electron. Mater. 21:1992;143.
4. G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy, Theory and Practice, Academic Press, San Diego, 1989, pp. 145, 158-160 (Chapter 4).
5. Koguchi M., Kakibayashi H., Yazawa M., Hiruma K., Katsuyama T. Jpn. J. Appl. Phys. 31:1992;2061.