High quality GaAs nanowires grown on glass substrates

Nano Letters

Volumn 12, Issue 4, 2012, Pages 1912-1918

  Dhaka, Veer ^a   Haggren, Tuomas ^a   Jussila, Henri ^a   Jiang, Hua ^a   Kauppinen, Esko ^a   Huhtio, Teppo ^a   Sopanen, Markku ^a   Lipsanen, Harri ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

fused silica; GaAs nanowires; glass substrate; photoluminescence; zinc blende structure

Indexed keywords

FLOAT GLASS; FUSED SILICA SUBSTRATES; GAAS; GLASS SUBSTRATES; GLASS SURFACES; HIGH QUALITY; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; OPTICAL QUALITIES; PHOTOLUMINESCENCE EMISSION; ROOM TEMPERATURE; STRUCTURAL DEFECT; UNINTENTIONAL DOPING; VAPOR-LIQUID-SOLID MECHANISM; WINDOW GLASS; ZINCBLENDE STRUCTURES;

ATMOSPHERIC PRESSURE; FUSED SILICA; GALLIUM ARSENIDE; GLASS; GROWTH TEMPERATURE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION; ZINC;

NANOWIRES;

EID: 84859700968     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204314z     Document Type: Article

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