Stoichiometric effect on electrical, optical, and structural properties of composition-tunable in xGa 1- xAs nanowires

ACS Nano

Volumn 6, Issue 10, 2012, Pages 9320-9325

  Hou, Jared J ^a   Wang, Fengyun ^a   Han, Ning ^a   Xiu, Fei ^a   Yip, Senpo ^a   Fang, Ming ^a   Lin, Hao ^a   Hung, Tak F ^a   Ho, Johnny C ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

composition tunable; field effect mobility; indium gallium arsenide; nanowires; stoichiometry; two step growth method

Indexed keywords

AS-GROWN; AVERAGE DIAMETER; CHEMICAL STOICHIOMETRY; DEFECT CONCENTRATIONS; FIELD-EFFECT MOBILITIES; GROWTH PARAMETERS; INDIUM GALLIUM ARSENIDE; MATERIAL SYSTEMS; MOBILITY DEGRADATION; NANOWIRE DEVICES; PHASE SEGREGATIONS; PHOTOVOLTAICS; POWDER MIXTURES; STOICHIOMETRIC COMPOSITIONS; STOICHIOMETRIC EFFECTS; TECHNOLOGICAL APPLICATIONS; TWO-STEP GROWTH;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; ENERGY GAP; GALLIUM; GALLIUM ALLOYS; NANOWIRES; OPTICAL CORRELATION; PHOTOVOLTAIC CELLS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

STRUCTURAL PROPERTIES;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; REFRACTOMETRY; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GALLIUM; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; REFRACTOMETRY; SURFACE PROPERTIES;

EID: 84867833195     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304174g     Document Type: Article

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