Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Liu, Guangyu ^a   Zhao, Hongping ^a   Zhang, Jing ^a   Park, Joo Hyung ^b   Mawst, Luke J ^b   Tansu, Nelson ^a  

^a Lehigh University   (United States)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; BLOCK COPOLYMERS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NANOCRYSTALS; ORGANIC CHEMICALS; ORGANOMETALLICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR ALLOYS; EPITAXIAL GROWTH; SILICON NITRIDE;

DIELECTRIC LAYER; INGAN QUANTUM DOTS; NANOPATTERNING; OPTICAL QUALITIES; PHOTONICS DEVICES; SELECTIVE AREA EPITAXY; SELF-ASSEMBLED DIBLOCK COPOLYMERS; ULTRAHIGH DENSITY; DIBLOCK COPOLYMER; DOT DENSITY; GAN TEMPLATE; INGAN/GAN; NANO PATTERN; PL INTENSITY; SPACER LAYER; ULTRA-HIGH; UNIFORM SIZE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84255167245     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-342     Document Type: Article

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