Experimental evidence and modified growth model of alloying in In x Ga1-xAs nanowires

Journal of Physical Chemistry C

Volumn 116, Issue 46, 2012, Pages 24777-24783

  Andrade, R Ribeiro ^a   Malachias, A ^a,b   Kellerman, G ^b   Negreiros, F R ^a   Santos, N M ^c   Sobolev, N A ^c   Moreira, M V B ^a   De Oliveira, A G ^a   Gonzalez J C ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^c UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADATOMS; CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM ARSENIDE; GROWTH TEMPERATURE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SUBSTRATES; TERNARY ALLOYS;

BEAM EQUIVALENT PRESSURE; CHEMICAL COMPOSITIONS; COMPOSITION RATIO; EXPERIMENTAL EVIDENCE; PREEXPONENTIAL FACTOR; SUBSTRATE SURFACE; X-RAY DIFFRACTION TECHNIQUES; X-RAY ENERGY DISPERSIVE SPECTROSCOPY;

GALLIUM;

EID: 84870266165     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp305031h     Document Type: Article

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