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Volumn 260, Issue 1-2, 2004, Pages 18-22
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Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: A growth study
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Author keywords
A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials
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Indexed keywords
ACTIVATION ENERGY;
CATALYSTS;
METALLORGANIC VAPOR PHASE EPITAXY;
NANOSTRUCTURED MATERIALS;
SEMICONDUCTING GALLIUM ARSENIDE;
WHISKER SIDE FACETS;
CRYSTAL WHISKERS;
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EID: 0242523149
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2003.08.009 Document Type: Article |
Times cited : (108)
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References (12)
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