Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Paiano, P ^a,b   Prete, P ^c   Lovergine, N ^a,b   Mancini, A M ^d  

^a CNISM   (Italy)

^b UNIVERSITY OF SALENTO   (Italy)

^c CNR   (Italy)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GOLD; METALLORGANIC VAPOR PHASE EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

NANOPARTICLES; NANOWIRES; TERTIARYBUTYLARSINE; TRIMETHYLGALLIUM;

NANOSTRUCTURED MATERIALS;

EID: 33751082629     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364603     Document Type: Article

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