Nanowire-based resistive switching memories: Devices, operation and scaling

Journal of Physics D: Applied Physics

Volumn 46, Issue 8, 2013, Pages

  Ielmini, D ^a   Cagli, C ^a,c   Nardi, F ^a,d   Zhang, Y ^b  

^a POLITECNICO DI MILANO   (Italy)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c CEA GRENOBLE   (France)

^d Intermolecular Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; CONVENTIONAL LITHOGRAPHY; CORE-SHELL; METAL-OXIDE; METALLIC ELECTRODES; NANO-METER SCALE; NANOWIRES (NWS); RELIABILITY CHARACTERISTICS; RESISTIVE SWITCHING MEMORIES; SINGLE ATOMS; SWITCHING REGIONS;

METALLIC COMPOUNDS; NANOWIRES; RANDOM ACCESS STORAGE;

SWITCHING;

EID: 84873625946     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/7/074006     Document Type: Article

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