Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 24-25

  Sasago, Y ^a   Kinoshita, M ^a   Morikawa, T ^a   Kurotsuchi, K ^a   Hanzawa, S ^a   Mine, T ^a   Shima, A ^a   Fujisaki, Y ^a   Kume, H ^a   Moriya, H ^a   Takaura, N ^a   Torii, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

Cross point; Phase change memory; Poly Si diode

Indexed keywords

CELL SIZE; CONTACT RESISTIVITIES; CROSS-POINT; LOW-THERMAL-BUDGET; OFF-CURRENT; ON-CURRENTS; POLY-SI; POLY-SI DIODE; SIZE REDUCTIONS;

DIODES; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 71049151621     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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4. N. Yamamoto et al., U.S. Pat. No. 7221056.
5. Y. Matsui et al., IEDM Tech. Dig., pp769-772 (2006).