Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 716-718

  Raghavan, N ^a   Pey, K L ^a,b   Li, X ^c   Liu, W H ^a   Wu, X ^a   Bosman, M ^d   Kauerauf, T ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e IMEC   (Belgium)

Author keywords

Bipolar switching; oxygen vacancy; reset current; resistive random access memory (RRAM)

Indexed keywords

BIPOLAR SWITCHING; GATE ELECTRODES; GATE STACKS; LOW RESET CURRENTS; NANOFILAMENTS; OXYGEN IONS; PHYSICAL ANALYSIS; RESET CURRENTS; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING POWER;

OXYGEN; RANDOM ACCESS STORAGE;

OXYGEN VACANCIES;

EID: 79957613435     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2127443     Document Type: Article

References (11)

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