Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires

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Volumn 7, Issue 20, 2011, Pages 2899-2905

  Cagli, Carlo ^a   Nardi, Federico ^a   Harteneck, Bruce ^b   Tan, Zhongkui ^b   Zhang, Yuegang ^b   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

core shell nanowires; metal insulator transition; nonvolatile memory; oxide electronics; resistive switching

Indexed keywords

BOTTOM-UP SCHEME; CORE-SHELL; CORE-SHELL NANOWIRES; CROSS-BAR JUNCTION; CROSS-BAR MEMORIES; DOWN-SCALING; ELECTRICAL CONTACTS; GOLD ELECTRODES; HIGH-DENSITY; LONG-TERM STORAGE STABILITY; MAGNETIC ALIGNMENT; MEMORY ARRAY; MEMORY DEVICE; MEMORY TECHNOLOGY; METAL INSULATORS; METAL OXIDE NANOWIRES; METAL OXIDES; METALLIC INTERCONNECTS; NANOSCALE DEVICE; NI NANOWIRES; NON-VOLATILE; NON-VOLATILE MEMORIES; ORDERS OF MAGNITUDE; OXIDE ELECTRONICS; RESISTANCE CHANGE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SELF-ASSEMBLED; THERMALLY OXIDIZED;

ELECTRIC WIRE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALLIC COMPOUNDS; METALS; NANOWIRES; SEMICONDUCTOR INSULATOR BOUNDARIES; SHELLS (STRUCTURES); SWITCHING; SWITCHING SYSTEMS; TERBIUM;

RANDOM ACCESS STORAGE;

NANOWIRE; NICKEL; NICKEL MONOXIDE;

ARTICLE; CHEMISTRY; ELECTRONICS; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY;

ELECTRONICS; NANOTECHNOLOGY; NANOWIRES; NICKEL;

EID: 80054015300     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201101157     Document Type: Article

References (30)

1. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632.
2. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 2005, 98, 033715.
3. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, B. H. Park, Appl. Phys. Lett. 2004, 85, 5655.
4. D. Ielmini, C. Cagli, F. Nardi, Appl. Phys. Lett. 2009, 94, 063511.
5. D. Ielmini, F. Nardi, C. Cagli, A. L. Lacaita, IEEE Electron Device Lett. 2010, 31, 353.
6. G.-S. Park, X.-S. Li, D.-C. Kim, R.-J. Jung, M.-J. Lee, S. Seo, Appl. Phys. Lett. 2007, 91, 222103.
7. D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C. S. Hwang, Nat. Nanotechnol. 2009, 5, 148.
8. J. P. Strachan, M. D. Pickett, J. J. Yang, S. Aloni, A. L. D. Kilcoyne, G. Medeiros-Ribeiro, R. S. Williams, Adv. Mater. 2010, 20, 1.
9. P. J. Kuekes, D. R. Stewart, R. S. Williams, J. Appl. Phys. 2005, 97, 034301.
10. G. S. Snider, P. J. Kuekes, IEEE Trans. Nanotechnology 2006, 5, 129.
11. J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, R. S. Williams, Nature 2010, 464, 873.
12. D. B. Strukov, G. S. Snider, D. R. Stewart, R. S. Williams, Nature 2008, 453, 80.
13. S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, W. Lu, Nano Lett. 2010, 10, 1297.
14. G. Y. Jung, S. Ganapathiappan, D. A. A. Ohlberg, D. L. Olynick, Y. Chen, W. M. Tong, R. S. Williams, Nano Lett. 2004, 4, 1226.
15. M. Meier, C. Nauenheim, S. Gilles, D. Mayer, C. Kugeler, R. Waser, Microelectron. Eng. 2008, 85, 870.
16. W. Lu, C. M. Lieber, Nat. Mater. 2007, 6, 841.
17. Z. Zhong, D. Wang, Y. Cui, M. W. Bockrath, C. L. Lieber, Science 2003, 302, 1377.
18. Y. Huang, X. Duan, Y. Cui, L. J. Lauhon, K.-H. Kim, C. M. Lieber, Science 2001, 294, 1313.
19. X. Duan, Y. Huang, C. M. Lieber, Nano Lett. 2002, 2, 487.
20. Y. Dong, G. Yu, M. C. McAlpine, W. Lu, C. M. Lieber, Nano Lett. 2008, 8, 386.
21. Y. Chai, Y. Wu, K. Takei, H.-Y. Chen, S. Yu, P. C. H. Chan, A. Javey, H.-S. P. Wong, IEDM Tech. Dig. 2010, 214.
22. S. I. Kim, J. H. Lee, Y. W. Chang, S. S. Hwang, K.-H. Yoo, Appl. Phys. Lett. 2008, 93, 033503.
23. K. Oka, T. Yanagida, K. Nagashima, T. Kawai, J.-S. Kim, B. H. Park, J. Am. Chem. Soc. 2010, 132, 6634.
24. N. A. Melosh, A. Boukai, F. Diana, B. Gerardot, A. Badolato, P. M. Petroff, J. R. Heath, Science 2003, 300, 112.
25. G. Y. Jung, S. Ganapathiappan, D. A. A. Ohlberg, D. L. Olynick, Y. Chen, W. M. Tong, R. Stanley Williams, Nano Lett. 2004, 4, 1225.
26. X. Zhao, J.-L. Sun, J.-L. Zhu, Appl. Phys. Lett. 2008, 93, 152107.
27. L. Courtade, C. Turquat, C. Muller, J. G. Lisoni, L. Goux, D. J. Wouters, D. Goguenheim, P. Roussel, L. Ortega, Thin Solid Films 2008, 516, 4083.
28. L. Goux, J. G. Lisoni, X. P. Wang, M. Jurczak, D. J. Wouters, IEEE Trans. Electron. Devices 2009, 56, 10.
29. D. Ielmini, C. Cagli, F. Nardi, Nanotechnology 2011, 22, 254022.
30. K. Oka, T. Yanagida, K. Nagashima, H. Tanaka, T. Kawai, J. Am. Chem. Soc. 2009, 131, 3434.