Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 26-27

  Hong, Sik Yoon ^a   Baek, In Gyu ^a   Zhao, Jinshi ^a   Sim, Hyunjun ^a   Min, Young Park ^a   Lee, Hansin ^a   Oh, Gyu Hwan ^a   Jong, Chan Shin ^a   Yeo, In Seok ^a   Chung, U In ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

ReRAM; Resistance change memory; RRAM; Vertical cross point; Vertically defined cell

Indexed keywords

RERAM; RESISTANCE CHANGE MEMORY; RRAM; VERTICAL CROSS-POINT; VERTICALLY DEFINED CELL;

EID: 71049149271     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. I. G. Baek, et al., "Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulse, IEDM Tech. Dig., 2004, pp. 587.