Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

Nanotechnology

Volumn 24, Issue 8, 2013, Pages

  Haas, F ^a,b   Sladek, K ^a,b   Winden, A ^a,b   Von Der Ahe, M ^a,b   Weirich, T E ^a,b,c   Rieger, T ^a,b   Luth H ^a,b   Grutzmacher D ^a,b   Schäpers, Th ^a,b   Hardtdegen, H ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Julich Aachen Research Alliance   (Germany)

^c GFE Gemeinschaftslabor für Elektronenmikroskopie   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORE/SHELL; GAAS; GROWTH OPTIMIZATION; INAS; METAL-ORGANIC VAPOR PHASE EPITAXY; NANO-IMPRINT; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; THERMAL NANOIMPRINT LITHOGRAPHY;

GALLIUM ARSENIDE; GROWTH TEMPERATURE; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NANOIMPRINT LITHOGRAPHY; OPTIMIZATION; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 84873471112     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/8/085603     Document Type: Article

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