Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 616-619

  Ikejiri, Keitaro ^a   Noborisaka, Jinichiro ^a   Hara, Shinjiroh ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

CATALYSTS; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

GROWTH TEMPERATURE; NANOWIRES; SELECTIVE EPITAXY; SUBSTRATE ORIENTATIONS;

NANOSTRUCTURED MATERIALS;

EID: 33846454714     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.179     Document Type: Article

References (14)

1. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
2. Huang Y., Duan X., Cui Y., Lauhon L.J., Kim K.-H., and Lieber C.M. Science 294 (2001) 1313
3. Ng H.T., Han J., Yamada T., Nguyen P., Chen Y.P., and Meyyappan M. Nano Lett. 4 (2004) 1247
4. Hiruma K., Morgan G.P., Katsuyama T., Ogawa K., Koguchi M., and Kobayashi H. Appl. Phys. Lett. 59 (1991) 431
5. Hiruma K., Yazawa H., Katuyama T., Ogawa K., Haraguchi K., Koguchi M., and Kakibayashi H. J. Appl. Phys. 77 (1995) 447
6. Ohlsson B.J., Björk M.T., Magnusson M.H., Deppert K., Samuelson L., and Wellenberg L.R. Appl. Phys. Lett. 79 (2001) 3335
7. Wu Z.H., Mei X., Kim D., Blumin M., Ruda H.E., Liu J.Q., and Kavanagh K.L. Appl. Phys. Lett. 83 (2003) 3368
8. Parala H., Devi A., Hipler F., Maile E., Becker A.H.W., and Fischer R.A. J. Crystal Growth 231 (2001) 68
9. Novotny C.J., and Yu P.K.L. Appl. Phys. Lett. 87 (2005) 203111
10. Shi W.S., Zheng Y.F., Wang N., Lee C.S., and Leeb S.T. Appl. Phys. Lett. 78 (2001) 3304
11. Motohisa J., Noborisaka J., Takeda J., Inari M., and Fukui T. J. Crystal Growth 272 (2004) 180
12. Noborisaka J., Motohisa J., and Fukui T. Appl. Phys. Lett. 86 (2005) 213102
13. Noborisaka J., Motohisa J., Hara S., and Fukui T. Appl. Phys. Lett. 87 (2005) 093109
14. Hayakawa T., and Morishima M. Appl. Phys. Lett. 59 (1991) 3321