Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (1 1 1) B using N2 carrier gas

Journal of Crystal Growth

Volumn 311, Issue 15, 2009, Pages 3813-3816

  Akabori, M ^a,b   Sladek, K ^a   Hardtdegen, H ^a   Schapers Th ^a   Grutzmacher D ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

A1. Nanostructures; A3. Metal organic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

A1. NANOSTRUCTURES; A3. METAL-ORGANIC VAPOR PHASE EPITAXY; A3. SELECTIVE EPITAXY; B1. NANOMATERIALS; B2. SEMICONDUCTING III-V MATERIALS;

ASPECT RATIO; CHEMICAL PROPERTIES; CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM ALLOYS; GROWTH TEMPERATURE; HYDROGEN; INDIUM ARSENIDE; NANOSTRUCTURED MATERIALS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 67650357559     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.015     Document Type: Article

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