High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO 2/Si (111)

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Hertenberger, S ^a   Funk, S ^a,b   Vizbaras, K ^a   Yadav, A ^b   Rudolph, D ^a   Becker, J ^a   Bolte, S ^a   Doblinger M ^c   Bichler, M ^a   Scarpa, G ^b   Lugli, P ^b   Zardo, I ^a,b   Finley, J J ^a   Amann, M C ^a   Abstreiter, G ^a,b   Koblmuller G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST-FREE; COMPOSITION RANGES; COMPOSITIONAL HOMOGENEITY; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GA CONTENT; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; INHOMOGENEITIES; LOW DEGREE; LOW TEMPERATURES; LOW-SIZE; MBE GROWTH; NANOWIRE ARRAYS; OPTIMIZED DEVICES; RAMAN MODES; SELF-ASSEMBLED; SITE SELECTIVE;

GALLIUM; MOLECULAR BEAM EPITAXY; NANOWIRES; PHASE SEPARATION; SEMICONDUCTOR QUANTUM WELLS; SILICON; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 84864491945     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4738769     Document Type: Article

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