Fabrication of 100-nm metamorphic AlInAs/GaInAs HEMTs grown on Si substrates by MOCVD

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 498-500

  Li, Ming ^a   Li, Haiou ^a   Tang, Chak Wah ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlInAs GaInAs; metal organic chemical vapor deposition (MOCVD); metamorphic high electron mobility transistors (mHEMTs); silicon

Indexed keywords

ALINAS/GAINAS; BUFFER SCHEMES; CURRENT GAIN CUTOFF FREQUENCY; GAAS SUBSTRATES; GATE LENGTH; HALL MEASUREMENTS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MAXIMUM OSCILLATION FREQUENCY; MAXIMUM TRANSCONDUCTANCE; ROOM TEMPERATURE; SHEET CARRIER DENSITIES; SI SUBSTRATES;

GALLIUM; GALLIUM ALLOYS; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; VAPORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862827359     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2186111     Document Type: Article

References (10)

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