Electron mobility enhancement in strained-germanium n -channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Yang, Y J ^d   Ho, W S ^d   Huang, C F ^d   Chang, S T ^a   Liu, C W ^b,c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL ORIENTATION; FIELD EFFECT TRANSISTORS; MOS DEVICES; TENSILE STRAIN;

CONDUCTIVITY MASS; ELECTRON MOBILITY ENHANCEMENT; QUANTIZATION MASS; SUBSTRATE ORIENTATION;

ELECTRON MOBILITY;

EID: 34548511986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2779845     Document Type: Article

References (19)

1. C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, IEEE Electron Device Lett. 26, 761 (2005).
2. M. L. Lee and E. A. Fitzgerald, Appl. Phys. Lett. 83, 4202 (2003).
3. S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, IEEE Electron Device Lett. 25, 40 (2004).
4. S. Dhar, H. Kosina, V. Palankovski, S. E. Ungersboeck, and S. Selberherr, IEEE Trans. Electron Devices 52, 527 (2005).
5. H. Irie, K. Kita, K. Kyuno, and A. Toriumi, Tech. Dig. - Int. Electron Devices Meet. 2004, 225.
6. K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, Tech. Dig. - Int. Electron Devices Meet. 2005, 129.
7. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
8. A. Rahman, M. S. Lundstrom, and A. W. Ghosh, J. Appl. Phys. 97, 053702 (2005).
9. J. J. Wortman and R. A. Evans, J. Appl. Phys. 36, 153 (1965).
10. I. Balslev, Phys. Rev. 143, 636 (1966).
11. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
12. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, Phys. Rev. B 70, 155309 (2004).
13. R. Kotlyar, D. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler, and E. Wang, Tech. Dig. - Int. Electron Devices Meet. 2004, 391.
14. S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, J. Appl. Phys. 80, 1567 (1996).
15. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
16. T. Low, M. F. Li, C. Shen, Y.-C. Yeo, Y. T. Hou, and C. Zhu, Appl. Phys. Lett. 85, 2402 (2004).
17. B. Ghosh, X. Wang, X.-F. Fan, L. F. Register, and S. K. Banerjee, IEEE Trans. Electron Devices 52, 547 (2005).
18. C.-Y. Peng, F. Yuan, C.-Y. Yu, P.-S. Kuo, M. H. Lee, S. Maikap, C.-H. Hsu, and C. W. Liu, Appl. Phys. Lett. 90, 012114 (2007).
19. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).