Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Bai, Yu ^a   Bulsara, Mayank T ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; GAAS; GASPHASE; GE FILMS; GE THIN FILMS; GROUP III; HIGH QUALITY; HIGH-CRYSTALLINE QUALITY; III-V COMPOUNDS; LATTICE-MATCHED; N-TYPE DOPING; P-TYPE DOPING; SPREADING RESISTANCE; STRUCTURAL QUALITIES; SURFACE EXCHANGES; UNINTENTIONAL DOPING;

ARSENIC; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIAMOND FILMS; ELECTRONIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; GERMANIUM; INDUSTRIAL CHEMICALS; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SPECTROMETRY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

SEMICONDUCTOR DOPING;

EID: 84855917424     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3673538     Document Type: Article

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