Calculation of hole mobility in Ge and III-V p-channels

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Volumn , Issue , 2009, Pages

  Zhang, Y ^a   Fischetti, M V ^a  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SCATTERING; BENEFICIAL EFFECTS; DIELECTRIC SCREENING; EXPERIMENTAL DATA; GAAS; LONGITUDINAL OPTICAL; MOBILITY ENHANCEMENT; NON-POLAR; SCATTERING PROCESS; SUBBAND STRUCTURES; THEORETICAL RESULT; UNIAXIAL STRESS;

ELECTRONICS ENGINEERING; GALLIUM ALLOYS; GERMANIUM; IONIC CONDUCTION; PHONON SCATTERING; PHONONS; SEMICONDUCTING INDIUM; SILICON COMPOUNDS; SURFACE ROUGHNESS;

HOLE MOBILITY;

EID: 70350236565     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091089     Document Type: Conference Paper

References (16)

1. R. Chau, Solid-State Technology 51, 30 (2008).
2. M. Passlack, R. Droopad, I. Thayne, and A. Asenov, Solid-State Technology 51, 26 (2008).
3. R. Oberhüber, G. Zandler, and P. Vogl, Phys. Rev. B 58, 9941 (1998).
4. A. T. Pham, C. Jungemann and B. Meinerzhagen, IEEE Trans. on Electron Devices, 54, 2174 (2007).
5. Y. Sun, S. E. Thompson, and T. Nishida, J. Appl. Phys. 101, 104503 (2007).
6. Y. Zhang, M. V. Fischetti, B. Sorée, and W. Magnus, "An Improved Self-consistent Method and Hole Mobility in Ge and GaAs Bulk PMOSFETs", Edinburgh Fringe Poster Session, ESSDERC-ESSCIRC 2008 Conference, Edinburgh, Scotland, Sep. 2008.
7. M. V. Fischetti, J. Appl. Phys. 89, 1232 (2001).
8. M. V. Fischetti, Z. Ren, P. Solomon, M. Yang, and K. Rim, J. Appl. Phys. 94, 1079 (2003).
9. R. W. Kelsall and R. A. Abram, Semicond. Sci. Technol. 7, B312 (1992).
10. R. E. Prange and T.-W. Nee, Phys. Rev. 168, 779, (1968).
11. G. Dresselhaus, A. F. Kip, and C. Kittel, Phys. Rev. 98, 368 (1955).
12. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
13. R. W. Kelsall, R. I. Taylor, A. C. G. Wood and R. A. Abram, Semicond. Sci. Technol. 5, 877 (1990).
14. M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
15. L. Gomez, C. N. Chlirigh, Y. Wang, X. Wang, and J. L. Hoyt, "Design Considerations for High Hole Mobiltiy Strained-SiGe and Strained-Ge Channel p-MOSFETs", International SiGe Technology and Device Meeting, Taipei, Taiwan, May 2008.
16. H. Shang, H. Okorn-Schimdt, J. Ott, P. Kozlowski, S. Steen, E. C. Jones, H.-S. P. Wong, and W. Hänsch, IEEE Elec. Dev. Lett. 24, 242 (2003).