Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces

Progress in Surface Science

Volumn 56, Issue 1-2, 1997, Pages 1-131

  Xue, Qi Kun ^a,b   Hashizume, T ^c   Sakurai, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF PHYSICS   (China)

^c HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; PHYSICAL PROPERTIES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SURFACE STRUCTURE; SURFACES;

ANTIMONIDES; ARSENIDES; PHOSPHIDES;

SURFACE TREATMENT;

EID: 0031221349     PISSN: 00796816     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0079-6816(97)00033-6     Document Type: Review

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