Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

Thin Solid Films

Volumn 520, Issue 8, 2012, Pages 3232-3235

  Minami, K ^a   Nakamura, Y ^a,b   Yamasaka, S ^a   Yoshitake, O ^a   Kikkawa, J ^a   Izunome, K ^c   Sakai, A ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Covalent Silicon Co Ltd ^*  (Japan)

Author keywords

Germanium on insulator; Pseudo MOSFET; Wafer bonding

Indexed keywords

ACCUMULATION MODES; CHANNEL MATERIALS; ELECTRICAL CHARACTERIZATION; FOUR POINT PROBE; GERMANIUM-ON-INSULATOR; INTERFACE STATE; INVERSION MODES; MOSFETS; N-TYPE GE; PSEUDO-MOSFET; SAMPLE POSITION; SPATIALLY INHOMOGENEOUS;

ELECTRIC PROPERTIES; GERMANIUM; INTERFACE STATES; INTERFACES (MATERIALS); MOSFET DEVICES; PROBES;

WAFER BONDING;

EID: 84857042172     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.175     Document Type: Conference Paper

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